FQP3P20 ,200V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQP3P50 ,500V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQP3P50500V P-Channel MOSFET
FQP44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQP44N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, R = 0.039Ω @V = 10 VDS(o ..
FQP44N10F , 100V N-Channel MOSFET
FQP45N03L ,30V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 45A, 30V, R = 0.018Ω @V = 10 VDS(on) ..
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
G901T21U , 3.3 V 300MA LOW DROPOUT REGULATOR
G901T24U , 3.3 V 300MA LOW DROPOUT REGULATOR
G903T63UF ,mode Technology Inc - 3.3V 600mA Low Dropout Regulator
G9105 ,mode Technology Inc - 5V 1A Low Dropout Regulator with Enable
FQP3P20
200V P-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQP3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S !!!!!!!! ���� ���� G!!!!!!!! �������� ���� ���� �������� ���� ���� G D TO-220 S FQP Series !!!! !!!! D Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQP3P20 Units V Drain-Source Voltage -200 V DSS I - Continuous (T = 25°C) Drain Current -2.8 A D C - Continuous (T = 100°C) -1.77 A C I (Note 1) Drain Current - Pulsed -11.2 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 150 mJ AS I Avalanche Current (Note 1) -2.8 A AR E (Note 1) Repetitive Avalanche Energy 5.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25°C) 52 W D C - Derate above 25°C 0.42 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.4 °C�W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C�W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQP3P20
