FQP3N60C ,N-Channel QFET?MOSFET 600V,3A, 3.4?FeaturesThis N-Channel enhancement mode power MOSFET is ®produced using Fairchild Semiconductor ’s ..
FQP3N60C ,N-Channel QFET?MOSFET 600V,3A, 3.4?FQP3N60C N-Channel MOSFET March 2013FQP3N60C N-Channel QFET MOSFET 600 V, 3.0 A, 3.4 Ω Description
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FQP3N60C
N-Channel QFET?MOSFET 600V,3A, 3.4?
FQP3N60C N-Channel MOSFET March 2013 FQP3N60C N-Channel QFET MOSFET 600 V, 3.0 A, 3.4 Ω Description Features This N-Channel enhancement mode power MOSFET is ® produced using Fairchild Semiconductor ’s proprietary • 3.0 A, 600 V, R = 3.4 Ω (Max) @V = 10 V, I = 1.5 A DS(on) GS D planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 10.5 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching • Low Crss (Typ. 5.0 pF) performance and high avalanche energy strength. These • 100% Avalanche Tested devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D {{ zz zz G {{ zz TO-220 G D S FQP Series {{ S Absolute Maximum Ratings Symbol Parameter FQP3N60C Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 3 A D C - Continuous (T = 100°C) 1.8 A C (Note 1) I Drain Current - Pulsed 12 A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 150 mJ AS I Avalanche Current (Note 1) 3A AR E Repetitive Avalanche Energy (Note 1) 7.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 75 W D C - Derate above 25°C 0.62 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit R Thermal Resistance, Junction-to-Case -- 1.67 °C/W θJC R Thermal Resistance, Junction-to-Case 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2006 FQP3N60C Rev. C0
