FQP3N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 600V, R = 3.6Ω @V = 10 VDS(on) ..
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FQP3N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 600V, R = 3.6Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" G D TO-220 S ! ! FQP Series S Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQP3N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 3.0 A D C - Continuous (T = 100°C) 1.9 A C I (Note 1) Drain Current - Pulsed 12 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 200 mJ AS I Avalanche Current (Note 1) 3.0 A AR E (Note 1) Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 75 W D C - Derate above 25°C 0.6 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.67 °C�W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C�W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQP3N60
