FQP33N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 33A, 100V, R = 0.052Ω @V = 10 VDS(on) ..
FQP33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQP33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQP34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 31A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQP34N20L ,200V LOGIC N-Channel MOSFETJune 2000TMQFET QFET QFET QFETFQP34N20L200V LOGIC N-Channel MOSFET
FQP3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
G901T21U , 3.3 V 300MA LOW DROPOUT REGULATOR
G901T24U , 3.3 V 300MA LOW DROPOUT REGULATOR
G903T63UF ,mode Technology Inc - 3.3V 600mA Low Dropout Regulator
G9105 ,mode Technology Inc - 5V 1A Low Dropout Regulator with Enable
FQP33N10
100V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQP33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, R = 0.052Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" G D TO-220 S ! ! FQP Series S Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQP33N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 33 A D C - Continuous (T = 100°C) 23 A C I (Note 1) Drain Current - Pulsed 132 A DM V Gate-Source Voltage ±�25 V GSS E (Note 2) Single Pulsed Avalanche Energy 435 mJ AS I Avalanche Current (Note 1) 33 A AR E (Note 1) Repetitive Avalanche Energy 12.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 127 W D C - Derate above 25°C 0.85 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.18 °C�W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C�W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQP33N10
