FQPF32N20C ,200V N-Channel Advance Q-FET C-SeriesFQP32N20C/FQPF32N20C®QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFET
FQPF33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQPF33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQPF34N20 ,200V N-Channel MOSFET
FQPF3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.3A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FQPF3N50C , 500V N-Channel MOSFET
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914GF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914HF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G915T24UF ,mode Technology Inc - 1.5V 600mA Low Dropout Regulator
G916-180T1UF ,mode Technology Inc - 300mA High PSRR, Low Noise, LDO Regulators
G916-250T1UF ,mode Technology Inc - 300mA High PSRR, Low Noise, LDO Regulators
FQP32N20C-FQPF32N20C
200V N-Channel Advance Q-FET C-Series
FQP32N20C/FQPF32N20C ® QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, R = 0.082Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 185 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D {{ ●● ◀◀ ▲▲ ●● G{{ ●● TO-220 TO-220F G D G S D S FQPF Series FQP Series {{ S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP32N20C FQPF32N20C Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 28.0 28.0 * A D C - Continuous (T = 100°C) 17.8 17.8 * A C I (Note 1) Drain Current - Pulsed 112 112 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 955 mJ AS I Avalanche Current (Note 1) 28.0 A AR E (Note 1) Repetitive Avalanche Energy 15.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 156 50 W D C - Derate above 25°C 1.25 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP32N20C FQPF32N20C Units R Thermal Resistance, Junction-to-Case 0.8 2.51 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2004 Rev. A, March 2004
