FQPF32N12V2 ,120V N-Channel Advanced QFET V2 seriesapplications lowest Rds(on) is required.D!!!!!!!!● ● ● ● ● ● ● ●◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀▲ ▲ ▲ ▲▲ ▲ ▲ ▲● ● ● ..
FQPF32N20C ,200V N-Channel Advance Q-FET C-SeriesFQP32N20C/FQPF32N20C®QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFET
FQPF33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQPF33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQPF34N20 ,200V N-Channel MOSFET
FQPF3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.3A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914GF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914HF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G915T24UF ,mode Technology Inc - 1.5V 600mA Low Dropout Regulator
G916-180T1UF ,mode Technology Inc - 300mA High PSRR, Low Noise, LDO Regulators
G916-250T1UF ,mode Technology Inc - 300mA High PSRR, Low Noise, LDO Regulators
FQP32N12V2-FQPF32N12V2
120V N-Channel Advanced QFET V2 series
FQP32N12V2/FQPF32N12V2 ® QFET FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 32 A, 120V, R = 0.05Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar stripe, DMOS technology. • Low Crss ( typical 70 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S !!!! !!!! FQP Series FQPF Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP32N12V2 FQPF32N12V2 Units V Drain-Source Voltage 120 V DSS I - Continuous (T = 25°C) Drain Current 32 32 * A D C - Continuous (T = 100°C) 23 23 * A C I (Note 1) Drain Current - Pulsed 128 128 * A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 439 mJ AS I Avalanche Current (Note 1) 32 A AR E Repetitive Avalanche Energy (Note 1) 15 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 150 50 W D C - Derate above 25°C 1 0.33 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP32N12V2 FQPF32N12V2 Units R Thermal Resistance, Junction-to-Case 1.0 3.0 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 40 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2003 Rev. A, December 2003
