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FQP2P25
250V P-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQP2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.3A, -250V, R = 4.0Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S !!!! !!!! �������� G!!!! �������� !!!! �������� �������� �������� G D TO-220 S !!!!!!!! FQP Series D Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQP2P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25°C) Drain Current -2.3 A D C - Continuous (T = 100°C) -1.45 A C I (Note 1) Drain Current - Pulsed -9.2 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) -2.3 A AR E (Note 1) Repetitive Avalanche Energy 5.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25°C) 52 W D C - Derate above 25°C 0.42 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.4 °C�W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C�W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQP2P25
