FQP2N60C ,600V N-Channel Advance Q-FET C-SeriesFQP2N60C/FQPF2N60CTMQFETFQP2N60C/FQPF2N60C600V N-Channel MOSFET
FQP2N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQP2N80800V N-Channel MOSFET
FQP2NA90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, R = 5.8 Ω @ V = 10 VDS(on ..
FQP2NA90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQP2NA90900V N-Channel MOSFET
FQP2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FQP2P40 ,400V P-Channel MOSFETFQP2P40December 2000TMQFET QFET QFET QFETFQP2P40400V P-Channel MOSFET
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
G901T21U , 3.3 V 300MA LOW DROPOUT REGULATOR
G901T24U , 3.3 V 300MA LOW DROPOUT REGULATOR
G903T63UF ,mode Technology Inc - 3.3V 600mA Low Dropout Regulator
G9105 ,mode Technology Inc - 5V 1A Low Dropout Regulator with Enable
FQP2N60C-FQPF2N60C
600V N-Channel Advance Q-FET C-Series
FQP2N60C/FQPF2N60C TM QFET FQP2N60C/FQPF2N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, R = 4.7Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 8.5 nC) planar stripe, DMOS technology. Low Crss ( typical 4.3 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S FQP Series FQPF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP2N60C FQPF2N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 2.0 2.0 * A D C - Continuous (T = 100°C) 1.35 1.35 * A C I (Note 1) Drain Current - Pulsed 88 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) 2.0 A AR E (Note 1) Repetitive Avalanche Energy 5.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 54 23 W D C - Derate above 25°C 0.43 0.18 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP2N60C FQPF2N60C Units R Thermal Resistance, Junction-to-Case 2.32 5.5 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2003 Rev. A, September 2003
