FQP27P06 ,60V P-Channel MOSFETFQP27P06May 2001TMQFETFQP27P0660V P-Channel MOSFET
FQP2N30 ,300V N-Channel MOSFET
FQP2N40 ,400V N-Channel MOSFET
FQP2N40 ,400V N-Channel MOSFET
FQP2N50 ,500V N-Channel MOSFET
FQP2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
G901T21U , 3.3 V 300MA LOW DROPOUT REGULATOR
G901T24U , 3.3 V 300MA LOW DROPOUT REGULATOR
G903T63UF ,mode Technology Inc - 3.3V 600mA Low Dropout Regulator
G9105 ,mode Technology Inc - 5V 1A Low Dropout Regulator with Enable
FQP27P06
60V P-Channel MOSFET
FQP27P06 May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, R = 0.07Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand a high energy pulse in the • Improved dv/dt capability avalanche and commutation modes. These devices are • 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S !!!!!!!! ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● TO-220 G D S FQP Series !!!!!!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP27P06 Units V Drain-Source Voltage -60 V DSS I - Continuous (T = 25°C) Drain Current -27 A D C - Continuous (T = 100°C) -19.1 A C I (Note 1) Drain Current - Pulsed -108 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 560 mJ AS I Avalanche Current (Note 1) -27 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P Power Dissipation (T = 25°C) 120 W D C - Derate above 25°C 0.8 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.25 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2001 Rev. A2. May 2001
