FQP22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQP24N08 ,80V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 24A, 80V, R = 0.06Ω @V = 10 VDS(on) G ..
FQP24N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQP27N25 ,250V N-Channel MOSFET
FQP27N25 ,250V N-Channel MOSFET
FQP27N25 ,250V N-Channel MOSFET
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
G901T21U , 3.3 V 300MA LOW DROPOUT REGULATOR
G901T24U , 3.3 V 300MA LOW DROPOUT REGULATOR
G903T63UF ,mode Technology Inc - 3.3V 600mA Low Dropout Regulator
G9105 ,mode Technology Inc - 5V 1A Low Dropout Regulator with Enable
FQP22P10
100V P-Channel MOSFET
FQP22P10 TM QFET FQP22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -22A, -100V, R = 0.125Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 160 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G TO-220 GS D FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP22P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -22 A D C - Continuous (T = 100°C) -15.6 A C I (Note 1) Drain Current - Pulsed -88 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 710 mJ AS I Avalanche Current (Note 1) -22 A AR E (Note 1) Repetitive Avalanche Energy 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P Power Dissipation (T = 25°C) 125 W D C - Derate above 25°C 0.83 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.2 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2002 Rev. B, August 2002
