FQP20N06 ,60V N-Channel MOSFETFQP20N06May 2001TMQFETFQP20N0660V N-Channel MOSFET
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FQP20N06
60V N-Channel MOSFET
FQP20N06 May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 60V, R = 0.06Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D ! ! "" !!"" "" G! ! "" G D TO-220 S ! ! FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP20N06 Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 20 A D C - Continuous (T = 100°C) 14.1 A C I (Note 1) Drain Current - Pulsed 80 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 155 mJ AS I Avalanche Current (Note 1) 20 A AR E (Note 1) Repetitive Avalanche Energy 5.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns P Power Dissipation (T = 25°C) 53 W D C - Derate above 25°C 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.85 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2001 Rev. A1. May 2001
