FQPF19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQPF19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQPF1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
FQPF20N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF20N06 ,60V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 15A, 60V, R = 0.06Ω @V = 10 VDS(on) G ..
FQPF20N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
G9131-33T73U ,mode Technology Inc - 300mA Low-Dropout Linear Regulators
G914C ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914CF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914D ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914DF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
FQP19N20C-FQPF19N20C
200V N-Channel Advance Q-FET C-Series
FQP19N20C/FQPF19N20C ® QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D {{ ●● ◀◀ ▲▲ ●● G{{ ●● TO-220 TO-220F G D G S D S FQPF Series FQP Series {{ S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP19N20C FQPF19N20C Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 19.0 19.0 * A D C - Continuous (T = 100°C) 12.1 12.1 * A C I (Note 1) Drain Current - Pulsed 76.0 76.0 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 433 mJ AS I Avalanche Current (Note 1) 19.0 A AR E (Note 1) Repetitive Avalanche Energy 13.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 139 43 W D C - Derate above 25°C 1.11 0.34 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP19N20C FQPF19N20C Units R Thermal Resistance, Junction-to-Case 0.9 2.89 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2004 Rev. A, March 2004
