FQP19N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 19A, 100V, R = 0.1Ω @V = 10 VDS(on) G ..
FQP19N10L ,100V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 19A, 100V, R = 0.1Ω @V = 10 VDS(on) G ..
FQP19N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQP19N20C ,200V N-Channel Advance Q-FET C-SeriesFQP19N20C/FQPF19N20C®QFETFQP19N20C/FQPF19N20C200V N-Channel MOSFET
FQP19N20L ,200V LOGIC N-Channel MOSFET
FQP1N50 ,500V N-Channel MOSFET
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G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
G901T21U , 3.3 V 300MA LOW DROPOUT REGULATOR
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G903T63UF ,mode Technology Inc - 3.3V 600mA Low Dropout Regulator
G9105 ,mode Technology Inc - 5V 1A Low Dropout Regulator with Enable
FQP19N10
100V N-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQP19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19A, 100V, R = 0.1Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" TO-220 G D S ! ! FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP19N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 19 A D C - Continuous (T = 100°C) 13.5 A C I (Note 1) Drain Current - Pulsed 76 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 220 mJ AS I Avalanche Current (Note 1) 19 A AR E (Note 1) Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 75 W D C - Derate above 25°C 0.5 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.0 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQP19N10
