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FQP15P12-FQPF15P12
120V P-Channel QFET
FQP15P12/FQPF15P12 ® QFET FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -15A, -120V, R = 0.2Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar stripe, DMOS technology. • Low Crss ( typical 110 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. S !!!!!!!! ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S !!!! FQP Series FQPF Series !!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP15P12 FQPF15P12 Units V Drain-Source Voltage -120 V DSS I - Continuous (T = 25°C) Drain Current -15 -15 * A D C - Continuous (T = 100°C) -10.6 -10.6 * A C I (Note 1) Drain Current - Pulsed -60 -60 * A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1157 mJ AS I Avalanche Current (Note 1) -15 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns P Power Dissipation (T = 25°C) 100 41 W D C - Derate above 25°C 0.67 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP15P12 FQPF15P12 Units R Thermal Resistance, Junction-to-Case 1.5 3.66 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 40 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2003 Rev. A, December 2003
