FQP13N50C ,500V N-Channel Advance Q-FET C-SeriesFQP13N50C/FQPF13N50C TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFET
FQP14N15 ,150V N-Channel MOSFET
FQP14N30 ,300V N-Channel MOSFET
FQP15P12 ,120V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -15A, -120V, R = 0.2Ω @V = -10 VDS(on ..
FQP16N15 ,150V N-Channel MOSFET
FQP16N25C ,250V N-Channel Advance Q-FET C-SeriesFQP16N25C/FQPF16N25C®QFETFQP16N25C/FQPF16N25C250V N-Channel MOSFET
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
G901T21U , 3.3 V 300MA LOW DROPOUT REGULATOR
FQP13N50C-FQPF13N50C-FQPF13N50C..
500V N-Channel Advance Q-FET C-Series
FQP13N50C/FQPF13N50C TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, R = 0.48Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S FQP Series FQPF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP13N50C FQPF13N50C Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 13 13 * A D C - Continuous (T = 100°C) 88 * A C I (Note 1) Drain Current - Pulsed 52 52 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 860 mJ AS I Avalanche Current (Note 1) 13 A AR E (Note 1) Repetitive Avalanche Energy 19.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 195 48 W D C - Derate above 25°C 1.56 0.39 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP13N50C FQPF13N50C Units R Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2003 Rev. A, April 2003
