FQP13N10L ,100V LOGIC N-Channel MOSFETapplications such as highefficiency switching DC/DC converters, and DC motorcontrol.D! !""!!""""G! ..
FQP13N50C ,500V N-Channel Advance Q-FET C-SeriesFQP13N50C/FQPF13N50C TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFET
FQP14N15 ,150V N-Channel MOSFET
FQP14N30 ,300V N-Channel MOSFET
FQP15P12 ,120V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -15A, -120V, R = 0.2Ω @V = -10 VDS(on ..
FQP16N15 ,150V N-Channel MOSFET
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQP13N10L
100V LOGIC N-Channel MOSFET
FQP13N10L December 2000 TM QFET QFET QFET QFET FQP13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.8A, 100V, R = 0.18Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175°C maximum junction temperature rating well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" G D S TO-220 ! ! FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP13N10L Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 12.8 A D C - Continuous (T = 100°C) 9.05 A C I (Note 1) Drain Current - Pulsed 51.2 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 95 mJ AS I Avalanche Current (Note 1) 12.8 A AR E (Note 1) Repetitive Avalanche Energy 6.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 65 W D C - Derate above 25°C 0.43 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.31 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A4, December 2000
