FQNL1N50B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.27A, 500V, R = 9.0Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N60 , 600V N-Channel MOSFET
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQNL1N50B
500V N-Channel MOSFET
FQNL1N50B March 2001 TM QFET FQNL1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.27A, 500V, R = 9.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. D ! ! "" !!"" "" G! ! "" TO-92L FQNL Series ! ! G D S S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQNL1N50B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 0.27 A D C - Continuous (T = 100°C) 0.17 A C I (Note 1) Drain Current - Pulsed 1.08 A DM V Gate-Source Voltage ± 30 V GSS I (Note 1) Avalanche Current 0.27 A AR E Repetitive Avalanche Energy (Note 1) 0.15 mJ AR (Note 2) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 1.5 W D C - Derate above 25°C 0.012 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient -- 83 °C/W θJA ©2001 Rev. A, March 2001
