FQN1N60C ,N-Channel QFET?MOSFET 600V, 0.3A, 11.5?Features• 0.30 A, 600 V, R = 11.5 Ω (Max) @V = 10 V, ID = 0.14 AThis N-Channel enhancement mode pow ..
FQNL1N50B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.27A, 500V, R = 9.0Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FQP10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
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FQN1N60C
N-Channel QFET?MOSFET 600V, 0.3A, 11.5?
FQN1N60C N-Channel MOSFET March 2013 FQN1N0C N-Channel QFET MOSFET 00 V, 0.3 A, 11.5 Ω Description Features • 0.30 A, 600 V, R = 11.5 Ω (Max) @V = 10 V, ID = 0.14 A This N-Channel enhancement mode power MOSFET is DS(on) GS ® produced using Fairchild Semiconductor ’s proprietary • Low Gate Charge (Typ. 4.8 nC) planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce • Low Crss (Typ. 3.5 pF) on-state resistance, and to provide superior switching • 100% Avalanche Tested performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D !!!! !!!! ● ●● ● ● ●● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲▲▲▲▲ ● ● ● ●● ● ● ● G!!!!!!!! G ● ● ● ●● ● ● ● TO-92 D FQN Series S !!!!!!!! S Absolute Maximum Ratings Symbol Parameter FQN1N60C Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 0.3 A D C - Continuous (T = 100°C) 0.18 A C I Drain Current - Pulsed (Note 1) 1.2 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 33 mJ AS I Avalanche Current (Note 1) 0.3 A AR E Repetitive Avalanche Energy (Note 1) 0.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 1 W D A Power Dissipation (T = 25°C) 3 W L - Derate above 25°C 0.02 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG T Maximum lead temperature for soldering purposes, 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Unit R Thermal Resistance, Junction-to-Lead (Note 6a) -- 50 °C/W θJL R Thermal Resistance, Junction-to-Ambient (Note 6b) -- 140 °C/W θJA ©2005 FQN1N60C Rev. C0 1
