FQI85N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQI9N08LTU ,80V N-Channel Logic Level QFETapplications such as automotive, high• Low level gate drive requirments allowingefficiency switchin ..
FQI9N08TU ,80V N-Channel QFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
FQI9N50 ,500V N-Channel MOSFET
FQI9N50CTU ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, R = 0.8 Ω @V = 10 VDS(o ..
FQI9N50TU ,500V N-Channel QFET
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQI85N06
60V N-Channel MOSFET
FQB85N06 / FQI85N06 May 2001 TM QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 85A, 60V, R = 0.010Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 86 nC) planar stripe, DMOS technology. • Low Crss ( typically 165 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB85N06 / FQI85N06 Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 85 A D C - Continuous (T = 100°C) 60 A C I (Note 1) Drain Current - Pulsed 300 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 810 mJ AS I Avalanche Current (Note 1) 85 A AR E (Note 1) Repetitive Avalanche Energy 16.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 160 W C - Derate above 25°C 1.07 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.94 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
