FQI5N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, R = 2.5Ω @V = 10 VDS(on) ..
FQI5N60CTU ,600V N-Channel Advance QFET C-SeriesFQB5N60C / FQI5N60CTMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFET
FQI5P10TU ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -4.5A, -100V, R = 1.05Ω @V = -10 VDS( ..
FQI7N10LTU ,100V N-Channel Logic Level QFETapplications such as high Low level gate drive requirments allowingefficiency switching DC/DC conv ..
FQI7N10TU ,100V N-Channel QFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQI7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQI5N60C-FQI5N60CTU
600V N-Channel Advance QFET C-Series
FQB5N60C / FQI5N60C TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, R = 2.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● 2 2 I -PAK D -PAK GS FQI Series FQB Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB5N60C / FQI5N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 4.5 A D C - Continuous (T = 100°C) 2.6 A C I (Note 1) Drain Current - Pulsed 18 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 210 mJ AS I Avalanche Current (Note 1) 4.5 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C)* 3.13 W A P Power Dissipation (T = 25°C) 100 W D C - Derate above 25°C 0.8 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case - 1.25 °C/W θJC R Thermal Resistance, Junction-to-Ambient* - 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient - 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, October 2003
