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FQG4904
400V Dual N & P-Channel MOSFET
FQG4904 TM QFET FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power • N-Channel 0.46A, 400V, R = 3.0 Ω @ V = 10 V DS(on) GS field effect transistors are produced using Fairchild’s P-Channel -0.46A, -400V, R = 3.0 Ω @ V = -10 V DS(on) GS proprietary, planar stripe, DMOS technology. • Low gate charge ( typical N-Channel 7.6 nC) This advanced technology has been especially tailored to ( typical P-Channel 20.0 nC) minimize on-state resistance, provide superior switching • Fast switching performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on half bridge. 5 4 D2 D2 D1 6 3 D1 G2 S2 7 2 G1 S1 Pin #1 8-DIP 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter N-Channel P-Channel Units V Drain-Source Voltage 400 -400 V DSS I - Continuous (T = 25°C) Drain Current 0.46 -0.46 A D A - Continuous (T = 100°C) 0.29 -0.29 A A I Drain Curent - Pulsed (Note 1) 3.68 -3.68 A DM V Gate-Source Voltage ± 30 V GSS (Note 2) dv/dt Peak Diode Recovery dv/dt 4.5 -4.5 V/ns P Power Dissipation (T = 25°C) 1.6 W D A - Derate above 25°C 0.013 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient (Note 5a) -- 78 °C/W θJA ©2002 Rev. A1, April 2002
