FQD6N60C ,600V N-Channel MOSFETFeatures Description 4 A, 600 V, R = 2.0 Ω @ V = 10 V These N-Channel enhancement mode power field ..
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FQD6N60C
600V N-Channel MOSFET
FQD6N60C 600V N-Channel MOSFET ® QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, R = 2.0 Ω @ V = 10 V These N-Channel enhancement mode power field effect DS(on) GS transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high 100 % avalanche tested efficiency switched mode power supplies, active power factor Improved dv/dt capability correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! D ● ● ● ●● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲▲▲▲▲ ● ● ● ●● ● ● ● G!!!!!!!! ● ●● ● ● ●● ● D-PAK G S FQD Series !!!!!!!! S Absolute Maximum Ratings Symbol Parameter FQD6N60C Units V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 4 A D C - Continuous (T = 100°C) 2.4 A C I Drain Current - Pulsed (Note 1) 16 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 300 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 8.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 80 W D C - Derate above 25°C 0.78 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG T Maximum lead temperature for soldering purposes, 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.56 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 1 FQD6N60C Rev. A
