FQD6N50CTM ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, R = 1.2 Ω @V = 10 VDS(on) ..
FQD6N60C ,600V N-Channel MOSFETFeatures Description 4 A, 600 V, R = 2.0 Ω @ V = 10 V These N-Channel enhancement mode power field ..
FQD6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQD6P25TF ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQD6P25TF ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQD6P25TM ,250V P-Channel QFETApril 2000TMQFET QFET QFET QFETFQD6P25 / FQU6P25250V P-Channel MOSFET
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQD6N50C-FQD6N50CTM
500V N-Channel Advance Q-FET C-Series
FQD6N50C / FQU6N50C ® QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, R = 1.2 Ω @V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC) planar stripe, DMOS technology. Low Crss (typical 15pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! D ● ● ● ●● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲ ▲▲▲▲ ● ● ● ●● ● ● ● !!!! G!!!! ● ●● ● ● ●● ● D-PAK I-PAK GS FQD Series FQU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD6N50C / FQU6N50C Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 4.5 A D C - Continuous (T = 100°C) 2.7 A C I Drain Current - Pulsed (Note 1) 18 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 300 mJ AS I (Note 1) Avalanche Current 4.5 A AR E Repetitive Avalanche Energy (Note 1) 6.1 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns Power Dissipation (T = 25°C)* 2.5 W A P Power Dissipation (T = 25°C) 61 W D C - Derate above 25°C 0.49 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case - 2.05 °C/W θJC R Thermal Resistance, Junction-to-Ambient * - 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient - 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2004 Rev. B, June 2004
