FQD5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
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FQD5P20
200V P-Channel MOSFET
May 2000 TM QFET QFET QFET QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • -3.7A, -200V, R = 1.4Ω @V = -10 V DS(on) GS This advanced technology has been especially tailored to • Low gate charge ( typical 10 nC) minimize on-state resistance, provide superior switching • Low Crss ( typical 12 pF) performance, and withstand high energy pulse in the • Fast switching avalanche and commutation mode. These devices are well • 100% avalanche tested suited for high efficiency switching DC/DC converters. S !!!!!!!! D ●●●●●●●● ●●●● G!!!!!!!! ●●●● ▶▶▶▶▶▶▶▶ ▲▲▲▲▲▲▲▲ ●●●●●●●● D-PAK I-PAK G S FQD Series G FQU Series D S !!!! !!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD5P20 / FQU5P20 Units V Drain-Source Voltage -200 V DSS I - Continuous (T = 25°C) Drain Current -3.7 A D C - Continuous (T = 100°C) -2.34 A C I (Note 1) Drain Current - Pulsed -14.8 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 330 mJ AS I Avalanche Current (Note 1) -3.7 A AR E (Note 1) Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 45 W C - Derate above 25°C 0.36 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.78 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQD5P20 / FQU5P20
