FQD4P40TM ,400V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQD4P40 / FQU4P40400V P-Channel MOSFET
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FQD4P40TM
400V P-Channel QFET
August 2000 TM QFET QFET QFET QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.7A, -400V, R = 3.1Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. S !!!!!!!! D ●●●●●●●● ●●●● G!!!!!!!! ●●●● ▶▶▶▶▶▶▶▶ ▲▲▲▲▲▲▲▲ ●●●●●●●● D-PAK I-PAK G S G FQD Series FQU Series D S !!!!!!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD4P40 / FQU4P40 Units V Drain-Source Voltage -400 V DSS I - Continuous (T = 25°C) Drain Current -2.7 A D C - Continuous (T = 100°C) -1.71 A C I (Note 1) Drain Current - Pulsed -10.8 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 260 mJ AS I Avalanche Current (Note 1) -2.7 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 50 W C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQD4P40 / FQU4P40
