FQD4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.2A, 200V, R = 1.35Ω @V = 10 VDS(on) ..
FQD4N25TM ,250V N-Channel QFET
Fqd4N50TM ,500V N-Channel QFET
FQD4N50TM ,500V N-Channel QFET
FQD4P25 ,250V P-Channel MOSFETFQD4P25 / FQU4P25December 2000TMQFET QFET QFET QFETFQD4P25 / FQU4P25250V P-Channel MOSFET
FQD4P40 ,400V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQD4P40 / FQU4P40400V P-Channel MOSFET
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
FQD4N20L
200V LOGIC N-Channel MOSFET
FQD4N20L / FQU4N20L December 2000 TM QFET QFET QFET QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.2A, 200V, R = 1.35Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S G FQD Series FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD4N20L / FQU4N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 3.2 A D C - Continuous (T = 100°C) 2.02 A C I (Note 1) Drain Current - Pulsed 12.8 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 52 mJ AS I Avalanche Current (Note 1) 3.2 A AR E (Note 1) Repetitive Avalanche Energy 3.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 30 W C - Derate above 25°C 0.24 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 4.17 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
