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FQD45N03L
30V LOGIC N-Channel MOSFET
FQD45N03L / FQU45N03L May 2001 TM QFET FQD45N03L / FQU45N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 30A, 30V, R = 0.025Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 105 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S G FQD Series FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD45N03L / FQU45N03L Units V Drain-Source Voltage 30 V DSS I - Continuous (T = 25°C) Drain Current 30 A D C - Continuous (T = 100°C) 19 A C I (Note 1) Drain Current - Pulsed 120 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 200 mJ AS I Avalanche Current (Note 1) 30 A AR E (Note 1) Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 45 W C - Derate above 25°C 0.36 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.78 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
