FQD20N06LTM ,60V N-Channel Logic level QFETapplications such as automotive, DC/• Low level gate drive requirements allowing directDC converter ..
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FQD20N06LTM-FQU20N06LTU
60V N-Channel Logic level QFET
FQD20N06L / FQU20N06L May 2001 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 17.2A, 60V, R = 0.06Ω @ V = 10V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability o avalanche and commutation mode. These devices are well • 150 C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ • Low level gate drive requirements allowing direct DC converters, and high efficiency switching for power operation form logic drivers management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S G FQD Series FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD20N06L / FQU20N06L Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 17.2 A D C - Continuous (T = 100°C) 10.9 A C I (Note 1) Drain Current - Pulsed 68.8 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 170 mJ AS I Avalanche Current (Note 1) 17.2 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 38 W C - Derate above 25°C 0.30 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.28 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
