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FQD1N80
800V N-Channel MOSFET
FQD1N80 / FQU1N80 May 2001 TM QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, R = 20Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S FQD Series G FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD1N80 / FQU1N80 Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 1.0 A D C - Continuous (T = 100°C) 0.63 A C I (Note 1) Drain Current - Pulsed 4.0 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 90 mJ AS I Avalanche Current (Note 1) 1.0 A AR E Repetitive Avalanche Energy (Note 1) 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns Power Dissipation (T = 25°C) * P 2.5 W A D Power Dissipation (T = 25°C) 45 W C - Derate above 25°C 0.36 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.78 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
