FQD1N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 1A, 600V, R = 11.5Ω @V = 10 VDS(on) G ..
FQD1N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 1A, 600V, R = 11.5Ω @V = 10 VDS(on) G ..
FQD1N60C ,600V N-Channel Advance QFET C-SeriesFQD1N60C / FQU1N60C®QFETFQD1N60C / FQU1N60C600V N-Channel MOSFET
FQD1N60TF ,600V N-Channel QFETApril 2000TMQFET QFET QFET QFETFQD1N60 / FQU1N60600V N-Channel MOSFET
FQD1N60TF ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
FQD1N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
FQD1N60C-FQU1N60C
600V N-Channel Advance QFET C-Series
FQD1N60C / FQU1N60C ® QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, R = 11.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. • Low Crss ( typical 3.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● D-PAK I-PAK GS FQD Series FQU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD1N60C / FQU1N60C Units V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 1A D C - Continuous (T = 100°C) 0.6 A C I Drain Current - Pulsed (Note 1) 4A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 33 mJ AS I (Note 1) Avalanche Current 1A AR E Repetitive Avalanche Energy (Note 1) 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C)* 2.5 W A P Power Dissipation (T = 25°C) 28 W D C - Derate above 25°C 0.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 4.53 °C/W θJC R Thermal Resistance, Junction-to-Ambient* -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, November 2003
