FQD19N10LTM ,100V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 100V, R = 0.1Ω @V = 10 VDS(on) ..
FQD19N10TM ,100V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 100V, R = 0.1Ω @V = 10 VDS(on) ..
FQD19N10TM ,100V N-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQD1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
FQD1N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 1A, 600V, R = 11.5Ω @V = 10 VDS(on) G ..
FQD1N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 1A, 600V, R = 11.5Ω @V = 10 VDS(on) G ..
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
FQD19N10LTF-FQD19N10LTM
100V N-Channel Logic Level QFET
August 2000 TM QFET QFET QFET QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 100V, R = 0.1Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S G FQD Series FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD19N10L / FQU19N10L Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 15.6 A D C - Continuous (T = 100°C) 9.8 A C I (Note 1) Drain Current - Pulsed 62.4 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 220 mJ AS I Avalanche Current (Note 1) 15.6 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 50 W C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQD19N10L / FQU19N10L
