FQD18N20V2TM ,200V N-Channel Advanced QFET V2 seriesapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQD19N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQD19N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.DD ! !""!!"""" ..
FQD19N10LTF ,100V N-Channel Logic Level QFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.DD ! !""!!"""" ..
FQD19N10LTM ,100V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 100V, R = 0.1Ω @V = 10 VDS(on) ..
FQD19N10TM ,100V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 100V, R = 0.1Ω @V = 10 VDS(on) ..
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
FQD18N20V2TM
200V N-Channel Advanced QFET V2 series
FQD18N20V2 / FQU18N20V2 TM QFET FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15A, 200V, R = 0.14Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D ! ! D "" !!"" "" G! ! "" I-PAK D-PAK GS FQD Series FQU Series GS D ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD18N20V2 / FQU18N20V2 Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 15 A D C - Continuous (T = 100°C) 9.75 A C I (Note 1) Drain Current - Pulsed 60 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 340 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns Power Dissipation (T = 25°C) * P 2.5 W A D Power Dissipation (T = 25°C) 83 W C - Derate above 25°C 0.67 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Rev. B1, August 2002
