FQD13N06L ,60V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11A, 60V, R = 0.115Ω @V = 10 VDS(on) ..
FQD13N06LTF ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQD13N06LTF ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQD13N06LTM ,60V N-Channel Logic level QFETFQD13N06L / FQU13N06LMay 2001TMQFETFQD13N06L / FQU13N06L60V LOGIC N-Channel MOSFET
FQD13N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 10A, 100V, R = 0.18Ω @V = 10 VDS(on) ..
FQD13N10L ,100V LOGIC N-Channel MOSFETapplications such as highefficiency switching DC/DC converters, and DC motorcontrol.DD ! !""!!""""G ..
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
FQD13N06L
60V LOGIC N-Channel MOSFET
FQD13N06L / FQU13N06L May 2001 TM QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11A, 60V, R = 0.115Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S G FQD Series FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD13N06L / FQU13N06L Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 11 A D C - Continuous (T = 100°C) 7A C I (Note 1) Drain Current - Pulsed 44 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 90 mJ AS I Avalanche Current (Note 1) 11 A AR E (Note 1) Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 28 W C - Derate above 25°C 0.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 4.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
