FQD12P10TM ,100V P-Channel QFETFQD12P10 / FQU12P10TMQFETFQD12P10 / FQU12P10100V P-Channel MOSFET
FQD12P10TM ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -9.4A, -100V, R = 0.29Ω @V = -10 VDS( ..
FQD13N06L ,60V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11A, 60V, R = 0.115Ω @V = 10 VDS(on) ..
FQD13N06LTF ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQD13N06LTF ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQD13N06LTM ,60V N-Channel Logic level QFETFQD13N06L / FQU13N06LMay 2001TMQFETFQD13N06L / FQU13N06L60V LOGIC N-Channel MOSFET
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
FQD12P10TF-FQD12P10TM
100V P-Channel QFET
FQD12P10 / FQU12P10 TM QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -9.4A, -100V, R = 0.29Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D D G I-PAK D-PAK GS FQD Series FQU Series GS D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD12P10 / FQU12P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -9.4 A D C - Continuous (T = 100°C) -6.0 A C I (Note 1) Drain Current - Pulsed -37.6 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 370 mJ AS I Avalanche Current (Note 1) -9.4 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 50 W C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8! from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Rev. B, August 2002
