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FQD11P06
60V P-Channel MOSFET
FQD11P06 / FQU11P06 May 2001 TM QFET FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -9.4A, -60V, R = 0.185Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand a high energy pulse in the • Improved dv/dt capability avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S !!!!!!!! D ● ● ● ● ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● D-PAK I-PAK G S G FQD Series FQU Series D S !!!!!!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD11P06 / FQU11P06 Units V Drain-Source Voltage -60 V DSS I - Continuous (T = 25°C) Drain Current -9.4 A D C - Continuous (T = 100°C) -5.95 A C I (Note 1) Drain Current - Pulsed -37.6 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 160 mJ AS I Avalanche Current (Note 1) -9.4 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 38 W C - Derate above 25°C 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.28 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A4. May 2001
