FQD10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 7.8A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQD10N20CTM ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 7.8A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQD10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQD10N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQD10N20LTM ,200V N-Channel Logic Level QFETFQD10N20L / FQU10N20LDecember 2000TMQFET QFET QFET QFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MO ..
FQD11P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -9.4A, -60V, R = 0.185Ω @V = -10 VDS( ..
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
FQD10N20C-FQD10N20CTM-FQU10N20C
200V N-Channel Advance Q-FET C-Series
FQD10N20C / FQU10N20C ® QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.8A, 200V, R = 0.36Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● D-PAK I-PAK GS FQD Series FQU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD10N20C / FQU10N20C Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 7.8 A D C - Continuous (T = 100°C) 5.0 A C I (Note 1) Drain Current - Pulsed 31.2 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 210 mJ AS I Avalanche Current (Note 1) 7.8 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 50 W D C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient* -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, December 2003
