FQB95N03L ,30V LOGIC N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQB95N03LTM ,30V N-Channel Logic PWM Optimezed Power MOSFETApplications• DC/DC convertersC (Typ) = 2600pFISSDRAIND (FLANGE)GATEGSOURCESTO-263ABMOSFET Maximum ..
FQB95N03LTM ,30V N-Channel Logic PWM Optimezed Power MOSFETapplications, this device improvesDS(ON) GSthe overall efficiency of DC/DC converters and allowsQ ..
FQB9N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
FQB9N08L ,80V LOGIC N-Channel MOSFETapplications such as automotive, high• Low level gate drive requirments allowingefficiency switchin ..
FQB9N08LTM ,80V N-Channel Logic Level QFETJune 2000TMQFET QFET QFET QFETFQB9N08L / FQI9N08L80V LOGIC N-Channel MOSFET
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB95N03L
30V LOGIC N-Channel MOSFET
FQB95N03L / FQI95N03L May 2001 TM QFET FQB95N03L / FQI95N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 95A, 30V, R = 0.0085Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 36 nC) planar stripe, DMOS technology. • Low Crss ( typical 240 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB95N03L / FQI95N03L Units V Drain-Source Voltage 30 V DSS I - Continuous (T = 25°C) Drain Current 95 A D C - Continuous (T = 100°C) 67.2 A C I (Note 1) Drain Current - Pulsed 380 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 400 mJ AS I Avalanche Current (Note 1) 95 A AR E (Note 1) Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 150 W C - Derate above 25°C 1.0 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
