FQB7P06TM ,60V P-Channel QFETFQB7P06 / FQI7P06May 2001TMQFETFQB7P06 / FQI7P0660V P-Channel MOSFET
FQB7P06TM ,60V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -7A, -60V, R = 0.41Ω @V = -10 VDS(on) ..
FQB7P20TM ,200V P-Channel QFET
FQB7P20TM ,200V P-Channel QFET
FQB8N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 250V, R = 0.55Ω @V = 10 VDS(on) ..
FQB8N25TM ,250V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 250V, R = 0.55Ω @V = 10 VDS(on) ..
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB7P06TM
60V P-Channel QFET
FQB7P06 / FQI7P06 May 2001 TM QFET FQB7P06 / FQI7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -7A, -60V, R = 0.41Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand a high energy pulse in the • Improved dv/dt capability avalanche and commutation modes. These devices are • 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S D !!!!!!!! ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G S 2 2 D -PAK I -PAK G D S !!!! !!!! FQB Series FQI Series D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB7P06 / FQI7P06 Units V Drain-Source Voltage -60 V DSS I - Continuous (T = 25°C) Drain Current -7.0 A D C - Continuous (T = 100°C) -4.95 A C I (Note 1) Drain Current - Pulsed -28 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 90 mJ AS I Avalanche Current (Note 1) -7.0 A AR E (Note 1) Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 45 W C - Derate above 25°C 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.35 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A2. May 2001
