FQB7N20LTM ,200V N-Channel Logic Level QFETFQB7N20L / FQI7N20LDecember 2000TMQFET QFET QFET QFETFQB7N20L / FQI7N20L200V LOGIC N-Channel MOSFET
FQB7N20LTM ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 6.5A, 200V, R = 0.75Ω @V = 10 VDS(on) ..
FQB7N20TM ,200V N-Channel QFET
FQB7N40 ,400V N-Channel MOSFET
FQB7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQB7N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB7N20LTM
200V N-Channel Logic Level QFET
FQB7N20L / FQI7N20L December 2000 TM QFET QFET QFET QFET FQB7N20L / FQI7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.5A, 200V, R = 0.75Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB7N20L / FQI7N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 6.5 A D C - Continuous (T = 100°C) 4.11 A C I (Note 1) Drain Current - Pulsed 26 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 73 mJ AS I Avalanche Current (Note 1) 6.5 A AR E (Note 1) Repetitive Avalanche Energy 6.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 63 W C - Derate above 25°C 0.51 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.98 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
