FQB70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N08TM ,80V N-Channel QFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB7N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQB7N10L ,100V LOGIC N-Channel MOSFETapplications such as high Low level gate drive requirments allowingefficiency switching DC/DC conv ..
FQB7N10LTM ,100V N-Channel Logic Level QFETFQB7N10L / FQI7N10LDecember 2000TMQFET QFET QFET QFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFET
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB70N08
80V N-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQB70N08 / FQI70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 70A, 80V, R = 0.017Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 75 nC) planar stripe, DMOS technology. • Low Crss ( typical 180 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB70N08 / FQI70N08 Units V Drain-Source Voltage 80 V DSS I - Continuous (T = 25°C) Drain Current 70 A D C - Continuous (T = 100°C) 49.5 A C I (Note 1) Drain Current - Pulsed 280 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1150 mJ AS I Avalanche Current (Note 1) 70 A AR E (Note 1) Repetitive Avalanche Energy 15.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 155 W C - Derate above 25°C 1.03 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.97 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQB70N08 / FQI70N08
