FQB6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FQB6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB6P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N08TM ,80V N-Channel QFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB6N80
800V N-Channel MOSFET
September 2000 TM QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D D ! ! "" 33 55 "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB6N80 / FQI6N80 Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 5.8 A D C - Continuous (T = 100°C) 3.67 A C I (Note 1) Drain Current - Pulsed 23.2 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 680 mJ AS I Avalanche Current (Note 1) 5.8 A AR E Repetitive Avalanche Energy (Note 1) 15.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns Power Dissipation (T = 25°C) * P 3.13 W A D Power Dissipation (T = 25°C) 158 W C - Derate above 25°C 1.27 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.79 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQB6N80 / FQI6N80
