FQB6N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, R = 2.0Ω @V = 10 VDS(on) ..
FQB6N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, R = 1.5Ω @V = 10 VDS(on) ..
FQB6N70TM ,700V N-Channel QFET
FQB6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FQB6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB6P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB6N60C
600V N-Channel Advance Q-FET C-Series
FQB6N60C / FQI6N60C ® QFET FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, R = 2.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! D ● ● ● ●● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲ ▲▲▲▲ ● ● ● ●● ● ● ● G!!!! !!!! 2 ● ● ● ●● ● ● ● 2 I -PAK D -PAK GS FQI Series FQB Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB6N60C / FQI6N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 5.5 5.5 * A D C - Continuous (T = 100°C) 3.3 3.3 * A C I Drain Current - Pulsed (Note 1) 22 22 * A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 300 mJ AS I Avalanche Current (Note 1) 5.5 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 125 W D C - Derate above 25°C 1.0 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case - 1.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient* - 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient - 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2004 Rev. A, March 2004
