FQB6N45 ,450V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 450V, R = 1.1Ω @V = 10 VDS(on) ..
FQB6N50 ,500V N-Channel MOSFET
FQB6N50TM ,500V N-Channel QFET
FQB6N50TM ,500V N-Channel QFET
FQB6N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, R = 1.5Ω @V = 10 VDS(on) ..
FQB6N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, R = 2.0Ω @V = 10 VDS(on) ..
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB6N45
450V N-Channel MOSFET
FQB6N45 / FQI6N45 January 2001 TM QFET QFET QFET QFET FQB6N45 / FQI6N45 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.2A, 450V, R = 1.1Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB6N45 / FQI6N45 Units V Drain-Source Voltage 450 V DSS I - Continuous (T = 25°C) Drain Current 6.2 A D C - Continuous (T = 100°C) 3.9 A C I (Note 1) Drain Current - Pulsed 25 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 350 mJ AS I Avalanche Current (Note 1) 6.2 A AR E (Note 1) Repetitive Avalanche Energy 9.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 98 W C - Derate above 25°C 0.78 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.28 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A1, January 2001
