FQB6N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 6A, 400V, R = 1.0 Ω @V = 10 VDS(on) ..
FQB6N40CTM ,400V N-Channel Advance Q-FET C-SeriesFQB6N40C/FQI6N40C TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFET
FQB6N45 ,450V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 450V, R = 1.1Ω @V = 10 VDS(on) ..
FQB6N50 ,500V N-Channel MOSFET
FQB6N50TM ,500V N-Channel QFET
FQB6N50TM ,500V N-Channel QFET
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB6N40C-FQB6N40CTM
400V N-Channel Advance Q-FET C-Series
FQB6N40C/FQI6N40C TM QFET FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 400V, R = 1.0 Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D ! ! D "" !!"" "" G! ! 2 "" 2 I -PAK D -PAK GS FQI Series FQB Series GS D ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB6N40C/FQI6N40C Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 6A D C - Continuous (T = 100°C) 3.6 A C I (Note 1) Drain Current - Pulsed 24 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 270 mJ AS I Avalanche Current (Note 1) 6A AR E (Note 1) Repetitive Avalanche Energy 7.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 73 W D C - Derate above 25°C 0.58 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.71 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2003 Rev. A, August 2003
