FQB65N06TM ,60V N-Channel QFET Mosfetapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB6N40 ,400V N-Channel MOSFET
FQB6N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 6A, 400V, R = 1.0 Ω @V = 10 VDS(on) ..
FQB6N40CTM ,400V N-Channel Advance Q-FET C-SeriesFQB6N40C/FQI6N40C TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFET
FQB6N45 ,450V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 450V, R = 1.1Ω @V = 10 VDS(on) ..
FQB6N50 ,500V N-Channel MOSFET
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB65N06TM
60V N-Channel QFET Mosfet
FQB65N06 / FQI65N06 May 2001 TM QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 65A, 60V, R = 0.016Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB65N06 / FQI65N06 Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 65 A D C - Continuous (T = 100°C) 46.1 A C I (Note 1) Drain Current - Pulsed 260 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 650 mJ AS I Avalanche Current (Note 1) 65 A AR E (Note 1) Repetitive Avalanche Energy 15.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 150 W C - Derate above 25°C 1.00 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.00 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
