FQB60N03L ,30V LOGIC N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQB60N03L ,30V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 60A, 30V, R = 0.0135Ω @V = 10 VDS(on) ..
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FQB6N40 ,400V N-Channel MOSFET
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FQB60N03L
30V LOGIC N-Channel MOSFET
FQB60N03L / FQI60N03L May 2001 TM QFET FQB60N03L / FQI60N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 60A, 30V, R = 0.0135Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 155 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB60N03L / FQI60N03L Units V Drain-Source Voltage 30 V DSS I - Continuous (T = 25°C) Drain Current 60 A D C - Continuous (T = 100°C) 42.5 A C I (Note 1) Drain Current - Pulsed 240 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 220 mJ AS I Avalanche Current (Note 1) 60 A AR E (Note 1) Repetitive Avalanche Energy 10.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 100 W C - Derate above 25°C 0.67 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.50 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
