FQI3P20TU ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQI3P50TU ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
FQI3P50TU ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
FQI4N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQB4N80 / FQI4N80800V N-Channel MOSFET
FQI4N80TU ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, R = 3.6Ω @V = 10 VDS(on) ..
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G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
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G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
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G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQB3P20TM-FQI3P20TU
200V P-Channel QFET
April 2000 TM QFET QFET QFET QFET FQB3P20 / FQI3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. D S !!!!!!!! ���� ���� G!!!!!!!! �������� ���� ���� �������� G S 2 2 ���� ���� D -PAK I -PAK G D S FQB Series FQI Series !!!! !!!! D Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQB3P20 / FQI3P20 Units V Drain-Source Voltage -200 V DSS I - Continuous (T = 25°C) Drain Current -2.8 A D C - Continuous (T = 100°C) -1.77 A C I (Note 1) Drain Current - Pulsed -11.2 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 150 mJ AS I Avalanche Current (Note 1) -2.8 A AR E (Note 1) Repetitive Avalanche Energy 5.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 52 W C - Derate above 25°C 0.42 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.4 °C�W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C�W θJA R � Thermal Resistance, Junction-to-Ambient -- 62.5 °C W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQB3P20 / FQI3P20
