FQB3P20 ,200V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQB3P20TM ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQB3P20TM ,200V P-Channel QFETApril 2000TMQFET QFET QFET QFETFQB3P20 / FQI3P20200V P-Channel MOSFET
FQB3P50 ,500V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
FQB3P50TM ,500V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQB44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB3P20
200V P-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQB3P20 / FQI3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. D S !!!!!!!! ���� ���� G!!!!!!!! �������� ���� ���� �������� G S 2 2 ���� ���� D -PAK I -PAK G D S FQB Series FQI Series !!!! !!!! D Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQB3P20 / FQI3P20 Units V Drain-Source Voltage -200 V DSS I - Continuous (T = 25°C) Drain Current -2.8 A D C - Continuous (T = 100°C) -1.77 A C I (Note 1) Drain Current - Pulsed -11.2 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 150 mJ AS I Avalanche Current (Note 1) -2.8 A AR E (Note 1) Repetitive Avalanche Energy 5.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 52 W C - Derate above 25°C 0.42 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.4 °C�W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C�W θJA R � Thermal Resistance, Junction-to-Ambient -- 62.5 °C W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQB3P20 / FQI3P20
