FQB32N20CTM ,200V N-Channel Advance Q-FET C-SeriesFQB32N20C/FQI32N20C®QFETFQB32N20C/FQI32N20C200V N-Channel MOSFET
FQB33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D D! !""!!"""" ..
FQB33N10LTM ,100V N-Channel Logic Level QFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D D! !""!!"""" ..
FQB33N10TM ,100V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 33A, 100V, R = 0.052Ω @V = 10 VDS(on) ..
FQB33N10TM ,100V N-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB32N20C-FQB32N20CTM
200V N-Channel Advance Q-FET C-Series
FQB32N20C/FQI32N20C ® QFET FQB32N20C/FQI32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, R = 0.082Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 185 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D {{ D ●● ◀◀ ▲▲ ●● 2 G{{ 2 I -PAK ●● D -PAK GS FQI Series FQB Series GS D {{ S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB32N20C / FQI32N20C Units V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25°C) 28.0 A D C - Continuous (T = 100°C) 17.8 A C I Drain Current - Pulsed (Note 1) 112 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 955 mJ AS I (Note 1) Avalanche Current 28.0 A AR E Repetitive Avalanche Energy (Note 1) 15.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C)* 3.13 W A P Power Dissipation (T = 25°C) 156 W D C - Derate above 25°C 1.25 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.8 °C/W θJC R Thermal Resistance, Junction-to-Ambient* -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2004 Rev. A, March 2004
