FQB2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FQB2P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FQB30N06 ,60V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 30A, 60V, R = 0.04Ω @V = 10 VDS(on) G ..
FQB30N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB30N06TM ,60V N-Channel QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB32N12V2 ,120V N-Channel Advanced QFET V2 seriesapplications lowest Rds(on) is required.D! !D""!!""""G! !""22 I -PAKD -PAKGS FQI SeriesFQB Series ! ..
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB2P25
250V P-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQB2P25 / FQI2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.3A, -250V, R = 4.0Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. D S !!!! !!!! �������� G �������� !!!!!!!! �������� �������� G S 2 2 �������� D -PAK I -PAK G D S FQB Series FQI Series !!!!!!!! D Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQB2P25 / FQI2P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25°C) Drain Current -2.3 A D C - Continuous (T = 100°C) -1.45 A C I (Note 1) Drain Current - Pulsed -9.2 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) -2.3 A AR E (Note 1) Repetitive Avalanche Energy 5.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 52 W C - Derate above 25°C 0.42 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.4 °C�W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C�W θJA R � Thermal Resistance, Junction-to-Ambient -- 62.5 °C W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQB2P25 / FQI2P25
